Manufacturing method of semiconductor integrated circuit device

Details Manufacturing method of semiconductor integrated circuit device Manufacturing method of semiconductor integrated circuit device

2004-11-18

2009-10-06

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S010000, C438S014000, C438S015000, C438S018000, C438S107000, C438S128000, C438S129000, C257SE21522, C257SE21531

Reexamination Certificate

active

07598100

ABSTRACT:
As the thickness of the card holder for preventing warping of a multilayered wiring substrate1is increased, there occurs a problem that a thin film sheet2is buried in a card holder and secure contact between probes7and test pads cannot be realized. For its prevention, the thin film sheet2and a bonding ring6are bonded in a state where a tensile force is applied only to the central region IA of the thin film sheet2, and a tensile force is not applied to an outer peripheral region OA. Then, the height of the bonding ring6defining the height up to the probe surface of the thin film sheet2is increased, thereby increasing the height up to the probe surface of the thin film sheet2.

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