Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-06
2007-02-06
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S633000, C438S645000, C438S687000, C438S692000
Reexamination Certificate
active
10863776
ABSTRACT:
In the forming process of buried wirings by filling wiring trenches formed in an insulator with a conductive film mainly made of Cu, the buried wirings are formed to have a uniform-height regardless of the width and density of the wiring trenches. When polishing a barrier conductor film comprised of a Ta film in the CMP process for forming the buried wirings, the polishing agent, which controls the removal rate of the underlying insulator of a silicon oxide film relative to the barrier conductor film to almost one twentieth or less, is used as the slurry, and the pad which is made of polyurethane with a hardness of 75 degrees or more measured by the Type E durometer in conformity with the JIS K6253 and which is comprised of the foam including non-uniform pores with a diameter of about 150 μm or larger and a density of about 0.4–0.16 g/cm3, is used as the polishing pad.
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Konishi Nobuhiro
Yamada Yohei
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Reed Smith LLP
Renesas Technology Corp.
Smoot Stephen W.
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