Manufacturing method of semiconductor devices

Details Manufacturing method of semiconductor devices Manufacturing method of semiconductor devices

1996-12-10

1998-11-17

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

438163, 438185, 438303, H01L 21339

Patent

active

058375686

ABSTRACT:
To provide a manufacturing method of thin film transistors (TFT) using poly-silicone and having an LDD structure. In particular, the LDD sections of the TFTs are formed in an improved method so as to achieve a high throughput and stable performance of the TFTs. To be specific, the LD region is doped at a low concentration in the ion implantation method which includes mass spectrometry because high controllability over a dose is required. On the other hand, the source and drain regions are doped at a higher concentration than the LD region in the ion showering method which does not include mass spectrometry. Using the ion showering method, poly-crystal silicon can be doped such that less doping damage is caused thereto. This makes it possible to apply a lower temperature for annealing, such as RTA, to activate doped impurities so as to prevent the substrate from being curved. Further, combination of the ion implantation method and the showering method achieves a high throughput production of TFTs having stable performance.

REFERENCES:
patent: 3909305 (1975-09-01), Boroffka et al.
patent: 4670064 (1987-06-01), Schachameyer et al.
patent: 4683838 (1987-08-01), Kimura et al.
patent: 5219798 (1993-06-01), Kamakura
patent: 5278407 (1994-01-01), Ikebe et al.
patent: 5354698 (1994-10-01), Cathey, Jr.
patent: 5365070 (1994-11-01), Anderson et al.
patent: 5436176 (1995-07-01), Shimizu et al.
patent: 5539203 (1996-07-01), Ohdomari
patent: 5543342 (1996-08-01), Mukai
patent: 5605851 (1997-02-01), Palmieri et al.
patent: 5628871 (1997-05-01), Shinagawa
patent: 5661308 (1997-08-01), Benveniste et al.
patent: 5736414 (1998-04-01), Yamaguchi
Y. Morimoto, et al., "A 2.4-in. Driver-Integrated Full-Color Quarter VGA (320X3X240). . .".
Atsushi Yoshinouchi, et al., "Poly-Silicon TFTs Fabricated at Low Temperature Using Ion Doping Technique", Central Research Laboratory, Sharp Corporation, vol. J76-C-II, pp. 276-282.
J. Tatemichi, et al., "Ion Doping System", vol. 39, No. 3 ('94. 11) pp. 52-58.

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-883850