Manufacturing method of semiconductor device using etching...

Details Manufacturing method of semiconductor device using etching... Manufacturing method of semiconductor device using etching...

2007-02-06

2010-06-01

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE21251, C252S079300

Reexamination Certificate

active

07727871

ABSTRACT:
This disclosure concerns a manufacturing method of a semiconductor device comprising an etching process using an etching solution having ozone dissolved by 10 ppm or more into a liquid containing H2SO4by 86 wt % to 97.9 wt %, HF by 0.1 wt % to 10 wt %, and H2O by 2 wt % to 4 wt %.

REFERENCES:
patent: 6645876 (2003-11-01), Saito et al.
patent: 2005/0230045 (2005-10-01), Okuchi et al.
patent: 2006/0014391 (2006-01-01), Lee et al.
Meuris et al. “Implementation of the IMEC-Clean in advanced CMOS manufacturing”, IEEE, 1999 pp. 157-160.

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