Manufacturing method of semiconductor device, semiconductor...

Details Manufacturing method of semiconductor device, semiconductor... Manufacturing method of semiconductor device, semiconductor...

2010-05-21

2011-10-04

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S031000, C438S792000, C438S149000, C438S500000, C257SE21302, C257SE33067, C257S501000, C257S502000

Reexamination Certificate

active

08030224

ABSTRACT:
A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed; forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed; and changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed.

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Office Action issued May 25, 2011, in Chinese Patent Application No. 200880117257.8.

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