Manufacturing method of semiconductor device including...

Details Manufacturing method of semiconductor device including... Manufacturing method of semiconductor device including...

2011-08-09

2011-08-09

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S296000, C438S586000, C438S597000, C438S598000, C257SE21170

Reexamination Certificate

active

07994049

ABSTRACT:
The present invention is to possible to avoid an inconvenience at a coupling portion between a barrier metal film obtained by depositing a titanium nitride film on a titanium film and thus having a film stack structure and a metal film filled, via the barrier metal film, in a connecting hole opened in an insulating film. The manufacturing method of a semiconductor device includes the steps of: forming a contact hole and exposing a nickel silicide layer from the bottom of the contact hole; forming a thermal reaction Ti film by a thermal reaction using a TiCl4gas, forming a plasma reaction Ti film by a plasma reaction using a TiCl4gas, carrying out plasma treatment with an H2gas to decrease the chlorine concentration of the plasma reaction Ti film and at the same time to reduce an oxide film on the surface of the nickel silicide layer; forming a nitrogen-rich TiN film over the surface of the plasma reaction Ti film and at the same time reducing the oxide film on the surface of the nickel silicide layer by thermal nitridation treatment with an NH3gas and plasma treatment with an NH3gas.

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