Manufacturing method of semiconductor device for enhancing...

Details Manufacturing method of semiconductor device for enhancing... Manufacturing method of semiconductor device for enhancing...

2010-06-30

2011-12-27

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S257000, C438S283000, C438S778000

Reexamination Certificate

active

08084373

ABSTRACT:
A manufacturing method of a semiconductor device is provided which can uniformly form a good and thin silicon oxide film or the like at a relatively low temperature. In step1,a semiconductor substrate is exposed to monosilane (SiH4). Then, in step2,the remaining monosilane (SiH4) is emitted. In step3,the semiconductor substrate is exposed to nitrous oxide plasma. A desired silicon oxide film is formed by repeating one cycle including steps1to3until a necessary thickness of the film is obtained.

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patent: 2005/0189600 (2005-09-01), Ohuchi et al.
patent: 2009/0014809 (2009-01-01), Sekine et al.
patent: 2000-114522 (2000-04-01), None
patent: 2008-60538 (2008-03-01), None

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