Manufacturing method of semiconductor device, and IC card,...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C257SE21689

Reexamination Certificate

active

07666722

ABSTRACT:
The present invention provides a manufacturing method of a semiconductor device used as an ID chip, by which data can be written with improved throughput. According to the manufacturing method of a semiconductor device having a modulation circuit, a demodulation circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate, the memory circuit is a nonvolatile memory circuit of which data is written in the manufacture of the semiconductor device, and elements in a data portion are formed by electron beam exposure or laser exposure while the other portions are formed by mirror projection exposure, step and repeat exposure, or step and scan exposure.

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International Search Report (Application No. PCT/JP2005/002680) dated May 31, 2005.
Written Opinion (Application No. PCT/JP2005/002680) dated May 31, 2005.
Office Action (Application No. 200580005359.7) Dated Mar. 13, 2009.

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