Manufacturing method of semiconductor device and...

Details Manufacturing method of semiconductor device and... Manufacturing method of semiconductor device and...

2006-01-31

2006-01-31

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S479000, C438S517000

Reexamination Certificate

active

06991996

ABSTRACT:
A laminated substrate is formed by laminating a device formation layer made of single crystalline semiconductor on a supporting substrate made of single crystalline semiconductor via an insulating layer with making one direction of a crystallographic axis of the device formation layer be shifted from a corresponding direction of a crystallographic axis of the supporting substrate. Semiconductor devices are formed in the device formation layer within a plurality of areas divided by scribe lines extending to a direction being parallel to a direction of a crystallographic axis where the supporting substrate is easy to be cleaved. The laminated substrate is split into a plurality of chips by cleaving the supporting substrate along the scribe lines. A semiconductor device can easily be split into chips even if a moving direction of carrier and an extending direction of wiring are shifted from an easy-cleaved direction of a crystallographic axis.

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Chinese Office Action dated Oct. 29, 2004 with partial English-translation.

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