Manufacturing method of semiconductor device and...

Details Manufacturing method of semiconductor device and... Manufacturing method of semiconductor device and...

2011-01-11

2011-01-11

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S241000, C438S624000, C257SE21573

Reexamination Certificate

active

07867890

ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device, which comprises steps of forming a plurality of wirings on a first insulating film formed on a semiconductor substrate so as to adjoin one another, forming a second insulating film on the first insulating film by a plasma CVD method and covering the wirings with the second insulating film in such a manner that air gaps are formed between the respective adjacent wirings, forming a third insulating film on the second insulating film by a high density plasma CVD method, and forming a fourth insulating film high in moisture resistance on the third insulating film.

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patent: 6300242 (2001-10-01), Ueda et al.
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patent: 08-213392 (1996-08-01), None
patent: 10-012730 (1998-01-01), None
patent: 2000-091431 (2000-03-01), None

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