Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-09-01
2010-06-01
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
Reexamination Certificate
active
07727907
ABSTRACT:
A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided.A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.
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Fujii Nobutoshi
Kohmura Kazuo
Oku Yoshiaki
Hamre Schumann Mueller & Larson P.C.
Mitsui Chemicals Inc.
Nguyen Ha Tran T
ULVAC Inc.
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