Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-30
2011-08-30
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S625000, C438S650000, C438S666000, C257S664000, C257S665000, C257S734000, C257SE23079
Reexamination Certificate
active
08008193
ABSTRACT:
Provided is a manufacturing method for improving the reliability of a semiconductor device having a back electrode. After formation of semiconductor elements on the surface of a silicon substrate, the backside surface thereof, which is opposite to the element formation surface, is subjected to the following steps in a processing apparatus. After deposition of a first metal film over the backside surface of the silicon substrate in a first chamber, it is heat treated to form a metal silicide film. Then, a nickel film is deposited in a third chamber, followed by deposition of an antioxidant conductor film in a second chamber. Heat treatment for alloying the first metal film and the silicon substrate is performed at least prior to the deposition of the nickel film. The first chamber has therefore a mechanism for depositing the first metal film and a lamp heating mechanism.
REFERENCES:
patent: 6719849 (2004-04-01), Horiguchi et al.
patent: 2002/0036345 (2002-03-01), Iseki et al.
patent: 2003/0034485 (2003-02-01), Uchida et al.
patent: 2007/0173045 (2007-07-01), Matsumura et al.
patent: 2001-332465 (2001-11-01), None
patent: 2005-93886 (2005-04-01), None
patent: 2005-136350 (2005-05-01), None
Kainuma Yoshihiro
Mitsui Katsuhiro
Miura Tatsuhiko
Ono Daisuke
Sato Takashi
Diallo Mamadou
Mattingly & Malur, PC
Renesas Electronics Corporation
Richards N Drew
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