Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-05-15
1999-11-16
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
257759, H01L 2144
Patent
active
059857501
ABSTRACT:
A manufacturing method is provided to manufacture a semiconductor device, which contains an interlayer insulating film corresponding to an oxide film or a film made of BPSG formed on a semiconductor substrate. Herein, selective etching is performed using etching gas with respect to an aluminum wiring layer, which is formed on the interlayer insulating film. Then, a surface of the interlayer insulating film, which is exposed by the selective etching, is subjected to reforming. Thereafter, a layer of fluoride amorphous carbon is formed in accordance with a CVD method or else. According to one method for the reforming, after the selective etching of the aluminum wiring layer, the etching gas is changed with gas containing CF.sub.4 so that plasma process is performed on the surface of the interlayer insulating film. According to another method for the reforming, before formation of the fluoride amorphous carbon, ion implantation of silicon is performed on the surface of the interlayer insulating film. Because of the reforming, it is possible to maintain adherence between the fluoride amorphous carbon and interlayer insulating film.
REFERENCES:
patent: 4843034 (1989-06-01), Hernadon et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5282922 (1994-02-01), Reche
patent: 5804259 (1998-09-01), Robles
Chaudhuri Olik
NEC Corporation
Wille Douglas A.
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