Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-01-17

2006-01-17

Nguyen, Ha (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S303000, C438S745000, C438S529000, C438S592000, C438S595000, C438S756000, C438S683000

Reexamination Certificate

active

06987062

ABSTRACT:
This invention offers a manufacturing method which does not cause a reduction in thickness of a silicon substrate or a carbon contamination in forming a transistor having an LDD stricture and silicide layers formed by a salicide technology. After a gate electrode is formed on the silicon substrate through a gate insulation film, an insulation film made of the same material as the gate insulation film is formed on the gate electrode. A first insulation film made of a material different from the material of the gate insulation film and the insulation film on the gate electrode and a second insulation film made of the same material as the material of the gate insulation film and the insulation film on the gate electrode are formed over the silicon substrate. Spacers made of the second insulation film are formed by dry-etching. Then the LDD structure and openings for forming the silicide layers are formed using wet-etching. As a result, the transistor having the LDD structure and the silicide layers formed by the salicide technology is manufactured without causing the reduction in thickness of the silicon substrate or the carbon contamination.

REFERENCES:
patent: 6468915 (2002-10-01), Liu
patent: 6635539 (2003-10-01), Kwon et al.
patent: 2002/0123181 (2002-09-01), Hachisuka
patent: 11-068094 (1999-03-01), None
patent: 11-186545 (1999-07-01), None
patent: 2000-091564 (2000-03-01), None

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