Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-03-29
2005-03-29
Chaudhari, Chandra (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S592000, C438S655000
Reexamination Certificate
active
06872642
ABSTRACT:
A method of manufacturing a semiconductor device is provided which can suppress leakage current increases by making into silicide. Impurity that suppresses silicide formation reaction (suppression impurity), such as germanium, is introduced into source/drain regions (16, 36) from their upper surfaces. In the source/drain regions (16, 36), a region shallower than a region where the suppression impurity is distributed (50) is made into silicide, so that a silicide film (51) is formed in the source/drain regions (16, 36). Thus, by making the region shallower than the region (50) into silicide, it is possible to suppress that silicide formation reaction extends to the underside of the region to be made into silicide. This enables to reduce the junction leakage between the source/drain regions (16, 36) and a well region.
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Oda Hidekazu
Ohta Kazunobu
Sayama Hirokazu
Sugihara Kouhei
Chaudhari Chandra
Renesas Technology Corp.
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