Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2005-03-08

2005-03-08

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S667000, C438S668000, C438S672000, C438S745000

Reexamination Certificate

active

06864172

ABSTRACT:
A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

REFERENCES:
patent: 6506681 (2003-01-01), Grigg et al.
patent: 6597059 (2003-07-01), McCann et al.
patent: 6649931 (2003-11-01), Honma et al.

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