Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2005-04-19

2005-04-19

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S638000, C438S687000

Reexamination Certificate

active

06881661

ABSTRACT:
In a via-first Dual Damascene method, after a via hole and a wiring trench are formed, an SiN film, an exposed portion of an SiC film and an exposed portion of an SiC film are removed by etching. As a result, the via hole reaches a Cu wire, and the wiring trench reaches an SiOC film. A reaction product adheres mainly to a side wall portion of the wiring trench. The reaction product also adheres to other spots, but an amount of adherence to the side wall portion is the largest. Subsequently, oxygen plasma treatment is performed for insides of the via hole and the wiring trench. As a result of this oxygen plasma treatment, the reaction product is removed.

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Patent Abstracts of Japan, Publication No. 2001284327, dated Oct. 12, 2001.

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