Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-06-21

2011-06-21

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S306000, C438S155000

Reexamination Certificate

active

07964455

ABSTRACT:
The method includes the steps of forming a gate insulating film over a first conductivity-type layer surface of a semiconductor substrate, implanting a second conductivity-type impurity into the first conductivity-type layer located on both sides adjacent to a conductive layer forming predetermined region, forming a conductive layer over the gate insulating film surface located to cover the first conductivity-type layer surface with no impurity implanted therein and the partial regions surface of the pair of low-concentration diffusion layers adjacent to the first conductivity-type layer, implanting a second conductivity-type impurity into regions uncovered with the conductive layer, of the pair of low-concentration diffusion layers to contact source and drain electrodes, and forming slits to divide regions lying on the sides of the high-concentration diffusion layers, each of which is provided to contact at least the drain electrode of the conductive layer located over the low-concentration diffusion layers, into two respectively.

REFERENCES:
patent: 5658808 (1997-08-01), Lin
patent: 2002-289845 (2002-10-01), None
patent: 2003-197765 (2003-07-01), None
patent: 2005-142475 (2005-06-01), None

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