Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Wilczwski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S354000, C257S642000, C257SE29270
Reexamination Certificate
active
07928510
ABSTRACT:
It is an object of the present invention to provide a manufacturing method of a semiconductor device where a semiconductor element is prevented from being damaged and throughput speed thereof is improved, even in a case of thinning or removing a supporting substrate after forming the semiconductor element over the supporting substrate. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of forming a plurality of element groups over an upper surface of a substrate; forming an insulating film so as to cover the plurality of element groups; selectively forming an opening to the insulating film which is located in a region between neighboring two element groups in the plurality of element groups to expose the substrate; forming a first film so as to cover the insulating film and the opening; exposing the element groups by removing the substrate; forming a second film so as to cover the surface of the exposed element groups; and cutting off between the plurality of element groups so as not to expose the insulating film.
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Robinson Eric J.
Robinson Intellectual Property Law Ofiice, P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Thomas Toniae M
Wilczwski Mary
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