Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-08
2011-03-08
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S625000, C438S629000, C438S645000
Reexamination Certificate
active
07902068
ABSTRACT:
In one aspect of the present invention, a method of fabricating a semiconductor device may include forming a sacrificial film on a substrate, forming an insulating film on the sacrificial film, forming a plurality of first openings in the sacrificial film and the insulating film in a first region and a second region, depositing a conductive material in the plurality of the first openings, forming a second opening in the insulating film in the second region so as to expose the sacrificial film, and removing the sacrificial film in the first region via the second opening in the second region.
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Nakamura Naofumi
Nasu Hayato
Shimooka Yoshiaki
Watanabe Tadayoshi
Garcia Joannie A
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Richards N Drew
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