Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2007-05-18

2011-10-11

Bryant, Kiesha (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257SE21090

Reexamination Certificate

active

08034696

ABSTRACT:
It is an object of the present invention to provide a method of manufacturing an SOI wafer at low cost and with high yield. It is another object of the present invention to provide a semiconductor device including also bulk type MISFETs used as high voltage regions and a method of manufacturing the same without using complicated processes and increasing the size of a semiconductor chip.The method of manufacturing a semiconductor device comprises selectively epitaxially growing a single-crystal Si layer and continuously performing the epitaxial growth without bringing a substrate temperature increased during the growth to room temperature even once. An epitaxially grown surface is then etched and planarized. The substrate temperature is then cooled down to the room temperature.

REFERENCES:
patent: 4522662 (1985-06-01), Bradbury et al.
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 4760036 (1988-07-01), Schubert
patent: 5321298 (1994-06-01), Moslehi
patent: 2000-208770 (2000-07-01), None
Pagliaro et al (J.ElectroChem.Soc.: Solid-state science and Technology),vol. 134, No. 5;pp. 1235-1238.
T. Mizuno et al., “Performance Fluctuations of 0.10 μm MOSFETs—Limitation of 0.1 μm ULSIs,” 1994 Symposium on VLSI Technology Digest of Technical Papers, 1994, pp. 13-14.
J. Yang et al., “Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal-oxide-semiconductor field effect transistors,” Journal of Applied Physics, vol. 91, No. 1, Jan. 1, 2002, pp. 420-426.
T. Yamada et al., “An Embedded DRAM Technology on SOI/Bulk Hybrid Substrate Formed with SEG Process for High-End SOC Application,” 2002 Symposium on VLSI Technology Digest of Technical Papers, 2002.

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