Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2010-03-08

2011-10-18

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S457000, C438S458000, C438S459000, C438S464000, C257SE21599

Reexamination Certificate

active

08039276

ABSTRACT:
The semiconductor device si formed by forming a first metal film over a first main surface of a semiconductor wafer having a first thinkness, performing back grinding to a second main surface of the semiconductor wafer thereby making a second thickness thinner than the first thickness and forming an insulation film pattern having a first insulation film and containing an annular insulation film pattern along the periphery of a second main surface of the semiconductor wafer over the second main surface along the periphery thereof. The second main surface of the semiconductor wafer is bonded to a pressure sensitive adhesive sheet thereby holding the device semiconductor wafer by way of the pressure sensitive adhesive sheet to a dicing frame in a state where the insulation film pattern is present.

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