Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2007-12-17

2011-10-25

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

Reexamination Certificate

active

08043796

ABSTRACT:
A light absorption layer is formed over a substrate, the light absorption layer is selectively irradiated with a laser beam, and a region of the light absorption layer, which is irradiated with the laser beam, is removed. By adding an impurity element imparting one conductivity type or an inert element to a remaining part of the light absorption layer, a tensile stress of the light absorption layer is made lower than that before irradiation with the laser beam.

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