Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-08-12
2010-11-16
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C438S096000, C438S680000, C257SE21170, C257SE21320, C257SE21051, C257SE21058, C257SE21077, C257SE21189, C257SE21229, C257SE21267, C257SE21400, C257SE21324, C257SE21411, C257SE21527
Reexamination Certificate
active
07833845
ABSTRACT:
An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.
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Dairiki Koji
Furuno Makoto
Jinbo Yasuhiro
Kuwabara Hideaki
Teduka Sachiaki
Nhu David
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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