Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2005-01-17

2010-02-02

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S357000, C257SE21090

Reexamination Certificate

active

07655528

ABSTRACT:
SiH3CH3having the concentration of 1 to 10% is diluted with H2and a portion of the diluted SiH3CH3, GeH4and SiH4(or DCS) are respectively supplied to a chamber of an epitaxial device at predetermined flow rates, and SiGe:C is formed by an epitaxial growth technique. By diluting the SiH3CH3, the concentration of oxygen-based impurity contained in the SiH3CH3is reduced and hence, the oxygen-based impurity which is supplied to a chamber are reduced whereby the concentration of oxygen-based impurity contained in the SiGe:C formed in a film is reduced.

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patent: 2003/0162370 (2003-08-01), Sukegawa et al.
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