Manufacturing method of semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S116000, C438S597000, C438S637000, C438S671000, C438S761000, C257SE21038, C257SE21039, C257SE21314

Reexamination Certificate

active

07622336

ABSTRACT:
To provide a manufacturing method of a semiconductor device with a reduced chip area by reducing the size of a pattern for forming an integrated circuit. For example, the size of an IC chip that is provided as an application of IC cards or IC tags can be reduced. The manufacturing method includes the steps of forming a gate electrode; forming an insulating layer over the gate electrode; and forming an opening in the insulating layer. One or both of the step of forming the gate electrode and the step of forming the opening in the insulating layer is/are conducted by a lithography process using a phase-shift mask or a hologram mask. Accordingly, micropatterns can be formed even over a substrate with low planarity such as a glass substrate.

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Chinese Office Action (Application No. 200610172809.8; CN9313) Dated May 22, 2009.

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