Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2008-01-25

2009-08-04

Coleman, W. David (Department: 4116)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

07569498

ABSTRACT:
A manufacturing method of a semiconductor device, includes forming a porous organo-siloxane film containing a porogen component having carbon as a main component above a semiconductor substrate, forming an upper-side insulating film having at least one of film density and film composition different from that of the porous organo-siloxane film on the porous organo-siloxane film, and applying at least one of an electron beam and an ultraviolet ray to the porous organo-siloxane film and upper-side insulating film to cause polymerization reaction of the porogen component in the porous organo-siloxane film.

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