Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-12-14

2009-10-06

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S033000, C438S068000, C438S113000, C438S464000

Reexamination Certificate

active

07598154

ABSTRACT:
Size of a chipping is made small, suppressing blinding of a blade, when performing dicing of a wafer.When cutting a wafer, cutting is performed so that the portion of a V character-shaped shoulder may enter below the front surface of a wafer (depth Z2from a substrate front surface) using the metal-bond blade which includes the abrasive particle whose fineness number is more than #3000, and whose point is V character form. By processing it in this way, cutting resistance goes up and blinding of a blade can be prevented. Hereby, the size of a chipping can be suppressed small, preventing blinding of a blade.

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patent: 7247524 (2007-07-01), Nakagawa
patent: 2002/0149295 (2002-10-01), Onishi et al.
patent: 2008/0003926 (2008-01-01), Watanabe et al.
patent: 5-198670 (1993-08-01), None
patent: 2003-197564 (2003-07-01), None
patent: 2005-158855 (2005-06-01), None

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