Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2005-09-02

2008-08-26

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S476000, C257SE21414

Reexamination Certificate

active

07416928

ABSTRACT:
An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an island-shaped amorphous semiconductor film and an island-shaped semiconductor film is formed. A source electrode and a drain electrode are formed over the island-shaped region. The island-shaped semiconductor film that is not covered by the source electrode and the drain electrode is removed using the source electrode and the drain electrode as a mask. At this time, the thickness of the island-shaped amorphous semiconductor film is reduced, and a portion of the island-shaped amorphous semiconductor film is exposed. A catalytic element promoting crystallization is added into a region in which the island-shaped amorphous semiconductor film is exposed. By a heat treatment, the island-shaped amorphous semiconductor film is crystallized and the catalytic element is gettered.

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