Manufacturing method of semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S612000, C438S613000, C257SE21508

Reexamination Certificate

active

07344971

ABSTRACT:
A manufacturing method of a semiconductor device comprises: (a) setting up a paste including a resin on an electrical connection part which is electrically connected to a semiconductor substrate; (b) setting up a soldering material above the electrical connection part so as to be in contact with the paste; and (c) forming an external terminal from the soldering material and forming a reinforcement from the paste by fusing the soldering material and the paste. The reinforcement exposes part of the external terminal and covers a periphery of an edge of a base connected to the electrical connection part of the external terminal.

REFERENCES:
patent: 6054171 (2000-04-01), Shoji
patent: 6887778 (2005-05-01), Watanabe et al.
patent: 6897142 (2005-05-01), Fujimori et al.
patent: 2001/0025874 (2001-10-01), Nishiyama
patent: 06-013541 (1994-01-01), None
patent: 2001-284382 (2001-10-01), None
patent: 2003-100948 (2003-04-01), None
patent: 2004-103928 (2004-04-01), None
Communication from Japanese Patent Office regarding corresponding application.

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