Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2008-05-20
2008-05-20
Rose, Kiesha (Department: 4176)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S109000, C438S112000, C438S118000
Reexamination Certificate
active
11348362
ABSTRACT:
A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved.
REFERENCES:
patent: 5849460 (1998-12-01), Kawai et al.
patent: 2002/0066953 (2002-06-01), Ishiwata et al.
patent: 2003/0057573 (2003-03-01), Sekine et al.
patent: 2004/0142509 (2004-07-01), Imai
patent: 2006/0043613 (2006-03-01), Kobayakawa
patent: 2006/0051900 (2006-03-01), Shizuno
patent: 2000-243880 (2000-09-01), None
patent: 2000-243887 (2000-09-01), None
patent: 2003-054638 (2003-02-01), None
patent: 2003-066205 (2003-03-01), None
patent: 2003-086737 (2003-03-01), None
patent: 2003-204732 (2003-07-01), None
Arai Katsuo
Kagii Hidemasa
Muto Akira
Nakajo Takuya
Nakamura Hiroyuki
Antonelli, Terry Stout & Kraus, LLP.
Jones Eric W
Renesas Technology Corp.
Rose Kiesha
LandOfFree
Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3954158