Manufacturing method of semiconductor device

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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Details

C438S109000, C438S112000, C438S118000

Reexamination Certificate

active

11348362

ABSTRACT:
A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved.

REFERENCES:
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patent: 2002/0066953 (2002-06-01), Ishiwata et al.
patent: 2003/0057573 (2003-03-01), Sekine et al.
patent: 2004/0142509 (2004-07-01), Imai
patent: 2006/0043613 (2006-03-01), Kobayakawa
patent: 2006/0051900 (2006-03-01), Shizuno
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patent: 2003-054638 (2003-02-01), None
patent: 2003-066205 (2003-03-01), None
patent: 2003-086737 (2003-03-01), None
patent: 2003-204732 (2003-07-01), None

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