Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-13
2007-02-13
Pham, Thanhha S. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S003000, C438S239000, C438S648000, C438S656000
Reexamination Certificate
active
10695642
ABSTRACT:
There are provided a step of forming an insulating film over a semiconductor substrate, a step of exciting a plasma of a gas having a molecular structure in which hydrogen and nitrogen are bonded and then irradiating the plasma onto the insulating film, a step of forming a self-orientation layer made of substance having a self-orientation characteristic on the insulating film, and a step of forming a first conductive film made of conductive substance having the self-orientation characteristic on the self-orientation layer.
REFERENCES:
patent: 2002/0013057 (2002-01-01), Abe
patent: 2002/0024142 (2002-02-01), Sekiguchi
patent: 9-053188 (1997-02-01), None
Takeshi Ohwaki, Tomoyuki Yoshida, Shoji Hashimoto, Hideki Hosokawa, Yasuichi Mitsushima and Yasunori Taga; Preferred Orientation in Ti Films Sputter-Deposited on SiO2Glass: The Role of Water Chemisorption on the Substrate; Jpn. J. Appl. Phys. vol. 36 (1997) pp. L154-L157, Part 2, No. 2A, Feb. 1, 1997.
Makiko Kageyama; Keiichi Hasimoto and Hiroshi Onoda; Formation of Texture Controlled Aluminum and its Migration Performance in Al-Si/TiN Stacked Structure; IEEE/IRPS; pp. 97-101; 1991.
Tsutomu Mitsuzuka; Highly Preferred [111] Texture of Al Films Deposited on Ultrathin Metal Underlayers; Jpn. J. Appl. Phys. vol. 31 (1992) pp. L1280-L1283, Part 2, No. 9A, Sep. 1, 1992.
Horii Yoshimasa
Kurasawa Masaki
Matsuura Katsuyoshi
Sashida Naoya
Takai Kazuaki
Fujitsu Limited
Pham Thanhha S.
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