Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1995-11-22
1998-07-21
Baxter, Janet C.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430320, 430325, 430326, 430327, G03C 500
Patent
active
057833656
ABSTRACT:
To present a manufacturing method of semiconductor device capable of preventing deactivation phenomenon of acid of chemically amplified resist when the foundation layer is a silicon nitride film, and obtaining a favorable resist shape, and enhanced in stability of resist patter. A silicon nitride film (3) is exposed to an oxygen atmosphere at 800.degree. to 1200.degree. C., and a thermal oxide film (4) in a thickness of about 40 to 50 angstroms (4 to 5 nm) is formed on the silicon nitride film (3), and then a resist layer (5) is formed. It hence eliminates the problems of instability of dimensions and shape of the silicon nitride film due to tail or under-cut formed in the sectional shape of the resist layer, and simultaneously solves the problem of instability of the resist pattern by peeling of the resist layer due to deterioration of adhesion between the resist layer and silicon nitride film.
REFERENCES:
patent: 4335505 (1982-06-01), Shibata et al.
patent: 5229254 (1993-07-01), Lohaus et al.
patent: 5314782 (1994-05-01), Lazarus et al.
patent: 5413953 (1995-05-01), Chien et al.
patent: 5418019 (1995-05-01), Chen et al.
patent: 5600165 (1997-02-01), Tsukamoto et al.
The Japan Society of Applied Physics, vol. 41, No. 2, p. 566, 1994, T. Fukushima, et al., "A Study for Substrate Surface Effect of Chemically Amplified Resist". Eng. Abstract only.
The Japan Society of Applied Physics, vol. 53, No. 2, p. 505, 1992, E. Shiobara, et al., "Influence of Surface Contamination on Chemically Amplified Positive Resist". Eng Abstract only.
Ashton Rosemary
Baxter Janet C.
Mitsubishi Denki & Kabushiki Kaisha
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