Fishing – trapping – and vermin destroying
Patent
1995-04-04
1996-01-16
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
437240, H01L 2102
Patent
active
054847494
ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while the substrate is heated, an organic silane and ozone are reacted to form a silicon oxide film on the substrate under normal pressure or reduced pressure. The present invention also provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while heating the substrate, organic silane, gas containing dopants such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film or the like is formed on the substrate under normal pressure or reduced pressure.
REFERENCES:
patent: 4056642 (1977-11-01), Saxena et al.
patent: 4361461 (1982-11-01), Chang
patent: 4590091 (1986-05-01), Rogers, Jr. et al.
patent: 4708884 (1987-11-01), Chandross et al.
patent: 4845054 (1989-07-01), Mitchener
patent: 4872947 (1989-10-01), Wang et al.
patent: 4980307 (1990-12-01), Ito et al.
patent: 4985372 (1991-01-01), Narita
patent: 5063081 (1991-11-01), Cozzette et al.
Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, pp. 182-190.
Fujino et al, "Surface Modification of Base Materials for TEOS/O.sub.3 . . . ," Reprinted from J. of Electrochemical Society V. 139, No. 6 (Jun. 1992).
Butherus, A., O.sub.2 plasma-converted spin-on-glass for planarization, J. Vac. Sci. Tech. B3(5), Oct. 1985, pp. 1352-1356.
Maeda Kazuo
Nishimoto Yuko
Tokumasu Noboru
Alcan-Tech Co., Inc.
Breneman R. Bruce
Canon Sales Co., Inc.
Fleck Linda J.
Semiconductor Process Laboratory Co. Ltd.
LandOfFree
Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-309236