Manufacturing method of semiconductor apparatus and...

Details Manufacturing method of semiconductor apparatus and... Manufacturing method of semiconductor apparatus and...

2011-01-25

2011-01-25

Wilson, Allan R (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE29295, C438S151000

Reexamination Certificate

active

07875509

ABSTRACT:
In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cm−3or less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.

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