Manufacturing method of semiconductor

Details Manufacturing method of semiconductor Manufacturing method of semiconductor

1999-08-24

2000-10-17

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438487, 257 59, 349 39, H01L 2100, H01L 2184

Patent

active

061330760

ABSTRACT:
A microwave is applied, in an atmosphere that prohibits formation of plasma, to an amorphous silicon film that has been formed on a glass substrate by a vapor phase method. Since the microwave is absorbed selectively by a surface layer of the amorphous silicon film due to the skin effect, the amorphous silicon film can be heated selectively and thereby modified into a crystalline silicon film without heating the glass substrate.

REFERENCES:
patent: 729308 (1998-03-01), Yamazaki et al.
patent: 5536950 (1996-07-01), Liu et al.
patent: 5963823 (1999-08-01), Yamazaki et al.

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