Manufacturing method of partial SOI wafer, semiconductor...

Details Manufacturing method of partial SOI wafer, semiconductor... Manufacturing method of partial SOI wafer, semiconductor...

2006-07-04

2006-07-04

Brock, II, Paul E (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

15, 15, 15, 15

Reexamination Certificate

active

07071039

ABSTRACT:
A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench formed to such a depth as to reach at least the buried oxide layer in a boundary portion between the first and second semiconductor regions, and an isolation insulating layer buried in the trench.

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