Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-15
2005-02-15
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S623000, C438S624000, C438S108000, C438S778000, C438S197000, C156S242000, C156S280000, C156S150000, C156S257000, C174S262000, C174S264000, C174S266000, C174S261000
Reexamination Certificate
active
06855625
ABSTRACT:
Single-sided conductor patterned films are prepared, each of which has a conductor pattern formed only one side of a resin film and via hole filled with conductive paste. A single-sided conductor patterned film which has a conductor pattern formed only one side of a resin film and an opening formed in the resin film so as to expose an electrode is laminated on the single-sided conductor patterned films. Moreover, a cover layer with an opening to expose an electrode is laminated on a bottom surface of the single-sided conductor patterned films to form a laminate. Then, by pressing while heating the laminate, a multilayer substrate having the electrodes at both sides thereof can be produced.
REFERENCES:
patent: 2736677 (1956-02-01), Eisler
patent: 4763403 (1988-08-01), Klein et al.
patent: 4915983 (1990-04-01), Lake et al.
patent: 5478972 (1995-12-01), Mizutani et al.
patent: 5865934 (1999-02-01), Yamamoto et al.
patent: 6228467 (2001-05-01), Taniguchi et al.
patent: 6320140 (2001-11-01), Enomoto
patent: 6586686 (2003-07-01), Enomoto et al.
patent: 1 430 640 (1976-03-01), None
patent: A-5-198946 (1993-08-01), None
patent: A-7-263867 (1995-10-01), None
patent: A-9-199635 (1997-07-01), None
patent: A-9-275273 (1997-10-01), None
patent: A-10-341082 (1998-12-01), None
patent: A-2000-101248 (2000-04-01), None
patent: A-2000-200976 (2000-07-01), None
patent: A-2000-277924 (2000-10-01), None
patent: A-2000-323839 (2000-11-01), None
Harada Toshikazu
Kamiya Tetsuaki
Kamiya Yasutaka
Kondo Koji
Masuda Gentaro
Anya Igwe U.
Posz & Bethards, PLC
Smith Matthew
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