Manufacturing method of laser diode and laser diode array

Fishing – trapping – and vermin destroying

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437130, 437133, 437972, H01L 2120

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active

053626753

ABSTRACT:
A manufacturing method of a laser diode and a laser diode array is disclosed. A current blocking layer is very thinly grown on the surface of a mesa-like structure provided in a semiconductor substrate due to certain growing characteristics when forming the current blocking layer on the surface of a semiconductor substrate. Therefore, a channel is formed by utilizing the characteristic that GaAs is etched faster than AlGaAs when melt-etched by an unsaturated melted source. A first cladding layer and epitaxial layers are subsequently formed. The channel is easily formed by melt-etching because the current blocking layer is thinly formed on the surface of a reverse mesa-like structure of the semiconductor substrate. Also, a desired operation mode is freely determinable by controlling the Al mole concentration of the current blocking layer. In manufacturing the laser diode and laser diode array, melt-etching for forming the current blocking layers is performed by one epitaxy step. Accordingly, the surface of a mesa-like structure on the substrate is protected from oxidation or defects after melt-etching, thereby improving the production yield and reliability of a given device.

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patent: 5192710 (1993-03-01), Schilling

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