Manufacturing method of insulating film and semiconductor...

Details Manufacturing method of insulating film and semiconductor... Manufacturing method of insulating film and semiconductor...

2005-11-22

2010-06-08

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S622000, C438S637000, C438S662000, C438S795000, C257SE21174, C257SE21273, C257SE21581

Reexamination Certificate

active

07732349

ABSTRACT:
The invention provides a manufacturing method of an insulating film having a plurality of pores, as well as a manufacturing method of a highly integrated semiconductor device with high yield. According to the invention, a porous insulating film is formed by forming a plurality of pores in an interlayer insulating film using a laser beam, which results in lower dielectric constant of the interlayer insulating film. In addition, a composition containing conductive particles is discharged onto the porous insulating film by a droplet discharge method typified by an ink jet printing method, and then baked to form a wire. As the laser beam, an ultrashort pulse laser beam is preferably used.

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Nikkei Microdevices, Nov. 2004, No. 233, pp. 58-65.
Notification of the First Office Action dated Sep. 5, 2008 in Chinese Counterpart Application No. 200510129035.6, with English translation.

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