Manufacturing method of electric charge transferring devices

Details Manufacturing method of electric charge transferring devices Manufacturing method of electric charge transferring devices

1996-01-23

1997-05-06

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

438587, 438 75, H01L 2170

Patent

active

056270968

ABSTRACT:
A resist layer with a pattern having openings on portions exposed to boundaries between any two adjacent transfer gate electrodes is formed on the surface of a polycrystal silicon layer used as a material for forming the transfer gate electrodes which polycrystal silicon layer has been formed on a gate insulating layer. The polycrystal silicon layer is then etched with the resist layer used as a mask and the surface of the polycrystal silicon layer is subsequently oxidized to form silicon oxide layers between any two adjacent transfer gate electrodes for insulating the adjacent transfer gate electrodes from each other. In this way, the number of manufacturing processes can be reduced by preventing a potential pocket, which gives rise to signal charge left untransferred beneath the space between any two adjacent transfer gate electrodes, from being developed while forming the transfer gate electrodes of the electric charge transferring device into a single-layer structure. As a result, the cost of manufacturing an electric charge transferring device can be reduced and, at the same time, the non-uniformity of the thickness of the gate insulating layers beneath the transfer gate electrodes can be avoided.

REFERENCES:
patent: 5369040 (1994-11-01), Halvis et al.
patent: 5434097 (1995-07-01), Shin et al.
patent: 5457332 (1995-10-01), Blanchard

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