Manufacturing method of dual damascene structure

Details Manufacturing method of dual damascene structure Manufacturing method of dual damascene structure

2009-03-18

2010-10-12

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S624000, C438S626000, C257SE21495

Reexamination Certificate

active

07811930

ABSTRACT:
A manufacturing method of a dual damascene structure is provided. First, a first dielectric layer, a second dielectric layer, and a mask layer are formed. A first trench structure is formed in the mask layer. A via structure is formed in the mask layer, the second dielectric layer, and the first dielectric layer. A portion of the second dielectric layer is then removed, so as to transform the first trench structure into a second trench structure. Here, a bottom of the second trench structure exposes the first dielectric layer.

REFERENCES:
patent: 6042999 (2000-03-01), Lin et al.
patent: 6197681 (2001-03-01), Liu et al.
patent: 6197696 (2001-03-01), Aoi
patent: 6350700 (2002-02-01), Schinella et al.
patent: 6376366 (2002-04-01), Lin et al.
patent: 6506680 (2003-01-01), Kim et al.
patent: 6638871 (2003-10-01), Wang et al.
patent: 6797633 (2004-09-01), Jiang et al.
patent: 2002/0173079 (2002-11-01), Kaltalioglu
patent: 2003/0008490 (2003-01-01), Xing et al.
patent: 2005/0001323 (2005-01-01), Watanabe et al.
patent: 2005/0161821 (2005-07-01), Lee et al.

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