Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-08-21
2007-08-21
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S197000, C438S584000, C438S763000, C257SE21051, C257SE21091, C257SE21632
Reexamination Certificate
active
11114870
ABSTRACT:
It is an object of the present invention to improve the surface planarity of a film by uniforming the thickness of an insulating layer. Further, it is another object of the invention to provide a technology for manufacturing an electronic device typified by a high-definition and high-quality display device with high yield at low cost with the use of the insulating layer. In a method for manufacturing a semiconductor device according to the invention, a semiconductor layer is formed; an insulating layer is formed over the semiconductor layer; a wiring layer connected to the semiconductor layer is formed in an opening provided in the insulating layer; and an electrode layer connected to the wiring layer is formed. The insulating layer is formed by spin coating with a composition containing an insulating material, which has a viscosity of from 10 mPa·s to 50 mPa·s.
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Fujii Teruyuki
Ogino Kiyofumi
Ohnuma Hideto
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Nhu David
Semiconductor Energy Laboratory Co,. Ltd.
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