Manufacturing method of compound semiconductor field effect tran

Details Manufacturing method of compound semiconductor field effect tran Manufacturing method of compound semiconductor field effect tran

1998-11-17

2000-09-05

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

H01L 21338

Patent

active

06114195&

ABSTRACT:
A manufacturing method of compound semiconductor field effect transistor capable of enhancing a gate/drain withstand voltage includes a step of forming a channel layer by implanting ions into the surface of a semi-insulating compound semiconductor substrate and a step of performing a first thermal treatment for removing crystalline defects on the surface of the channel layer. This method also includes a step of forming a compound semiconductor epitaxial layer by use of an epitaxial method on a region covering the channel layer, a step of forming a gate electrode within a region on the epitaxial layer just above the channel layer and a step of forming a source region and a drain region in the substrate. A concentration of the impurity for forming the channel layer at an interface between the channel layer and the epitaxial layer is 45% or under of the highest concentration when forming the channel layer. A good interface between the channel layer and the epitaxial layer can be thereby obtained, and a transistor having the high-quality epitaxial layer can be also acquired.

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Nishihori et al., A self-aligned gate Al/GaAs/GaAs hetertrostructure field-effect transistor with an ion-implanted buried-channel for use in high efficiency power amplifiers, Jpn. J. Appl. Phys. vol. 37, pp 3200-3204, Jun. 1998.

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