Manufacturing method of CMOS type semiconductor device, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE21276

Reexamination Certificate

active

07569890

ABSTRACT:
The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered.The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

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patent: 6541321 (2003-04-01), Buller et al.
patent: 2004/0029350 (2004-02-01), Robertson
patent: 2005/0274948 (2005-12-01), Tamura et al.
patent: 2006/0043369 (2006-03-01), Varghese et al.
patent: 2006/0115940 (2006-06-01), Kim et al.
patent: 2001-291865 (2001-10-01), None
N. Kimizuka, et al, “NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation”, Symposium on VLSI Technology Digest of Technical Papers 2000, 2 pages.
Takayuki Aoyama, et al, “Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitride”, Journal of Applied Physics vol. 77(1), Jan. 1995, pp. 417-419.

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