Manufacturing method of CMOS thin film semiconductor device and

Details Manufacturing method of CMOS thin film semiconductor device and Manufacturing method of CMOS thin film semiconductor device and

1996-10-03

2000-10-03

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438163, 438231, H01L 2100

Patent

active

061272108

ABSTRACT:
A simple and convenient method of manufacturing a CMOS TFT semiconductor circuit device wherein a doping layer doped into a first conductivity type without a mask is compensated with a dopant of a second conductivity type having a high density so that the conductivity type of the doping layer of first conductivity type is inverted into the second conductivity type, and further, in order to carry out the inversion of the conductivity type by the compensation easily and reliably, the surface density of the dopant of the doping layer of first conductivity type is reduced prior to compensating with the dopant of second conductivity type.

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H. Ohshima, et al. "Full-Color LCDs with Completely Integrated Drivers Utilizing Low-Temperature Poly-Si TFTs" (SID 93 DIGST, pp. 387-390).

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