Manufacturing method of a thin-film semiconductor device

Details Manufacturing method of a thin-film semiconductor device Manufacturing method of a thin-film semiconductor device

2006-08-01

2006-08-01

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S166000

Reexamination Certificate

active

07084020

ABSTRACT:
A method of forming thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.

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Ruska, Walter E.W., Microelectronic Processing. 1987, p. 58, McGraw-Hill.
Copy of Search Report/Office Action from Foreign Patent Office, issued Oct. 19, 2005.
Sze, S. M., High-speed Semiconductor Devices, 1990, pp. 248-249, John Wiley & Sons, Inc.

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