Manufacturing method of a surface acoustic wave device

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S311000, C430S312000, C430S313000, C430S316000, C430S317000, C430S318000, C430S319000, C427S100000, C029S025350

Reexamination Certificate

active

06416934

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a method of manufacturing a surface acoustic wave (SAW) device, such as a SAW filter.
BACKGROUND OF THE INVENTION
A conventional method of manufacturing a surface acoustic wave device (SAW device) is shown in FIG.
5
.
A metal layer which comprises Al—Cu (aluminum-copper alloys) is formed on a piezoelectric substrate
51
made of LiTaO
3
. Then, the metal layer is patterned using a conventional photo-lithography etching method to form an interdigital electrode
52
, as shown in FIG.
5
(A).
An oxide layer
53
is formed on the substrate
51
. Then, a part of the oxide layer
53
, which corresponds to a pad region where a bonding pad will be formed later, is opened using the conventional photo-lithography etching method, as shown in FIG.
5
(B).
Then, a resist layer
54
is formed on and above the substrate
51
. The resist layer
54
is opened in the pad region such that a side surface thereof is inversely tapered, as shown in FIG.
5
(C).
A pad electrode layer
55
is formed on and above the substrate
51
, as shown in FIG.
5
(D). The pad electrode layer
55
is comprised of two layers, with the lower layer thereof being Cr (chromium) or Ti (titanium) and the upper layer thereof being Au (gold).
Then, the resist layer
54
is removed by acetone and a bonding pad
56
is formed using a conventional lift off method, as shown in FIG.
5
(E).
However, using the lift off method, it is initially difficult to obtain regularly shaped bonding pads. Further, a material of the pad electrode layer which does not dissolve in the acetone can sometime attach to the substrate.
To avoid such problems, one might consider forming the bonding pad using a conventional photo-lithography etching process. However, the oxide layer on the interdegital electrode is extremely thin, which is a characteristic of the SAW device. Therefore, if the bonding pad were etched using the conventional photo-lithography etching process, the interdigital electrode under the oxide layer would likely be etched as well. This would adversely change the characteristics of the SAW device.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a method of manufacturing a surface acoustic wave (SAW) device in which a bonding pad may be formed using a photo-lithography etching process without changing the characteristics of the SAW device.
To achieve the above and other objects, an interdigital electrode of a SAW device according to the invention is protected by a protective layer during a photo-lithography etching process which is applied to a bonding pad.
According to the present invention, as the bonding pad can be formed using a photo-lithography etching process, it is possible to obtain regularly shaped bonding pads without damaging the characteristics of the SAW device


REFERENCES:
patent: 3963568 (1976-06-01), Nikaido et al.
patent: 4472652 (1984-09-01), Brice et al.
patent: 5390401 (1995-02-01), Shikata et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Manufacturing method of a surface acoustic wave device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of a surface acoustic wave device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of a surface acoustic wave device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2852623

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.