Manufacturing method of a silicon wafer having a controlled BMD

Details Manufacturing method of a silicon wafer having a controlled BMD Manufacturing method of a silicon wafer having a controlled BMD

1996-03-07

1998-08-04

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117 4, 117 20, 117932, 438146, 438147, C30B 2502

Patent

active

057887632

ABSTRACT:
In a heat history initializing step, a heat treatment in performed in an atmosphere including at least one of hydrogen, helium, and argon while the temperature is increased in a range of 700.degree. C. to 1,000.degree. C. at a rate of 15.degree.-1,000.degree. C./min. In a controlled nuclei growing step, a heat treatment is performed in the above atmosphere while the temperature is kept constant in a range of 850.degree. C. to 980.degree. C. for 0.5-60 minutes.

REFERENCES:
patent: 4597804 (1986-07-01), Imaoka
patent: 5403406 (1995-04-01), Falster et al.
patent: 5534294 (1996-07-01), Kubota et al.
patent: 5593494 (1997-01-01), Falster

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